We investigate switching properties of different diode technologies at small load currents and, by use of Fourier transformation, analyze impact of snap oscillations on system. We show that, especially at load current below 10% of device’s nominal current, state of the art diode technology contributes to EMI noise level significantly which results in a performance derating on system level. By introducing an active rear side structure in diode design, snap off is reduced drastically, faster switching is enabled. This new diode technology provides a similar forward voltage drop, reduced reverse recovery charge, and a smaller footprint. Consequently, due to the reduced total losses, a gain in output power of 13% is achieved on system level.
