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Technical Lecture

T04 - Design Techniques for Wide Bandgap Power Modules

Tuesday, February 27, 2024
8:30 AM – 12:00 PM PST
Location: 104A

Presentations:

  • 8:30 AM – 8:50 AM PST
    A 200V Monolithic GaN Dynamic Floating Voltage Level Shifter with Nanosecond Propagation Delays and Noise-Immune Slewing Control

    Technical Lecture Presenter: Fei Zhou (he/him/his) – The University of Texas at Dallas

  • 8:50 AM – 9:10 AM PST
    A 400W, 250kHz (2kW Peak) Integrated GaN Half Bridge Power Module in a Non-Isolated Buck Converter

    Technical Lecture Presenter: Douglas C. Hopkins, PhD – North Carolina State University

  • 9:10 AM – 9:30 AM PST
    A Gallium Nitride Integrated Power Module with Ultra-Low Parasitic Inductances and Thermal Resistance

    Technical Lecture Presenter: Zezheng Dong, PhD (he/him/his) – ZJU-Hangzhou Global Scientific and Technological Innovation Center

  • 9:30 AM – 9:50 AM PST
    Power Module Design with Chip-Level Series-Connected SiC MOSFETs

    Technical Lecture Presenter: Tobias Ubostad, M.Sc. – Norwegian University of Science and Technology

  • 9:50 AM – 10:10 AM PST
    A Full SiC MOSFET DCDC Boost Power Module Using 2 kV SiC MOSFET for 1500V String Solar Inverter Applications

    Technical Lecture Presenter: Yusi Liu, PhD – ON Semiconductor

  • 10:40 AM – 11:00 AM PST
    A Novel Double-Sided Cooling 3L-ANPC SiC MOSFET Power Module with Interleaved Layout

    Technical Lecture Presenter: Xiaobo Dong, PhD – Xi'an Jiaotong University

  • 11:00 AM – 11:20 AM PST
    GaN FET with Integrated Current Sense Without Supply

    Technical Lecture Presenter: Yinglai Xia, PhD – Infineon Technologies

  • 11:20 AM – 11:40 AM PST
    Development of Pressure Contact Technology for Multi-Chip SiC Modules with Low Parasitics

    Technical Lecture Presenter: Lei Wang, PhD – University of Twente

  • 11:40 AM – 12:00 PM PST
    SiC Engineered Substrate: Increasing SiC MOSFETs Current Density from Device to Module Level

    Technical Lecture Presenter: Eric Guiot, PhD – Soitec