T21.2 - A Digital Gate Driver IC with a Digitally Adjustable DESAT and Parameter Adjustment Method for False Detection Prevention and Short-Circuit Protection of 1200V 180A SiC Module

This paper presents a digitally adjustable DESAT and its parameter adjustment method. The DESAT circuit has adjustable blanking time and detection threshold voltage, and is implemented in the CMOS process. Using the proposed method, DESAT parameters are adjusted for a 1200V 180A SiC module to provide protection in the event of a short-circuit while preventing false detection during normal switching. In the HSF (hard switching fault) case, short-circuit protection is achieved with a short-circuit duration of less than 2.5us and a peak voltage of less than 800V.