Michael Basler, PhD (he/him/his)

Research Associate
Fraunhofer Institute for Applied Solid State Physics IAF

Michael Basler (Member, IEEE) received the M.Sc. degree in power and microelectronics from Reutlingen University, Reutlingen, Germany, in 2018, and the Ph.D. degree in sustainable system engineering from the University of Freiburg, Freiburg, Germany, in 2023. Since 2019, he has been a Research Associate with the Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, where he is involved in the development, design and characterization of GaN-based devices and ICs for power-electronic applications.

Presentation(s):

• T14.4 - Vertical GaN Transistor with Quasi-Monolithically Integrated HEMT Gate Driver and Sense-CAVET for Current Monitoring

  Wednesday, February 28, 2024
  9:30 AM – 9:50 AM PST