D06 - Devices & Components

Technical Dialogue Session Chair(s)

• HY

  Hengzhao Yang

  Shanghai Tech University
• DD

  Dong Dong

  Assistant Professor
  Virginia Polytechnic Institute and State University

Presentations:

• 11:30 AM – 1:30 PM PST

  Overshoot Prevention in Monolithic GaN by Ultra-Low ESL Gate Loop Design Using Chip-Scale Capacitors and Gate Driver Pull-Up Path Tuning Technique
  

  Technical Dialogue Presenter: Niklas Deneke, MSc (he/him/his) – Institute of Microelectronic Systems, Leibniz University Hannover
• 11:30 AM – 1:30 PM PST

  Triangular and Rectangular Power Pulses in Automotive MOSFETs Applications for Thermally Unstable Linear Mode
  

  Technical Dialogue Presenter: Christian Radici, MS – Nexperia
• 11:30 AM – 1:30 PM PST

  Modeling the Effect of Gate-Drain Parasitic Capacitance of a SiC MOSFET in a Half-Bridge During the Soft Turn-Off and Hard Turn-on Transition
  

  Technical Dialogue Presenter: Ayooluwa A. Ajiboye (he/him/his) – University of Maryland
• 11:30 AM – 1:30 PM PST

  Gan and SiC Based 500kHz Resonant Bidirectional DC/DC Design for 800V OBCM Application
  

  Technical Dialogue Presenter: Minli Jia, Master – Navitas
• 11:30 AM – 1:30 PM PST

  Design and Implementation of GaN-HEMT-Based Inverter-Coil Integrated Module for Free Zone Induction Heating System
  

  Technical Dialogue Presenter: Sang Min Park, PhD – Korea Electronics Technology Institute (KETI)
• 11:30 AM – 1:30 PM PST

  Remaining Useful Life Prediction of Aluminum Electrolytic Capacitor with a Strain-Based Health Indicator
  

  Technical Dialogue Presenter: Bo Yao, PhD – Aalborg university
• 11:30 AM – 1:30 PM PST

  Impact of Bond Wire Degradation on Thermal Estimation and Temperature Coefficient of IGBT Modules in Power Cycling Test
  

  Technical Dialogue Presenter: Yichi Zhang, PhD (he/him/his) – Aalborg University

  Technical Dialogue Presenter: Yi Zhang – Aalborg University
• 11:30 AM – 1:30 PM PST

  A Multi-Metrics in Situ Aging Detector for SiC Power MOSFET Modules with Full Driver-Integration Capability
  

  Technical Dialogue Presenter: Shuofeng Zhao, PhD (he/him/his) – National Renewable Energy Laboratory
• 11:30 AM – 1:30 PM PST

  An Experimental Technique for Detecting False Turn-on of SiC MOSFETs
  

  Technical Dialogue Presenter: Kaushik Basu, PhD – Indian Institute of Sciences
• 11:30 AM – 1:30 PM PST

  Single Event Upset in Depletion-Mode Gallium Oxide MOSFETs at the Breakdown Region
  

  Technical Dialogue Presenter: Abu Shahir Md Khalid Hasan, MS – University of Arkansas
• 11:30 AM – 1:30 PM PST

  Switching Cell Design for Medium Voltage Flying Capacitor Converter with 10 kV SiC MOSFET
  

  Technical Dialogue Presenter: Ruirui Chen, PhD – University of Tennessee
• 11:30 AM – 1:30 PM PST

  FET Junction Temperature Monitoring Using Novel On-Chip Solution
  

  Technical Dialogue Presenter: Ramandeep Narwal – North Carolina State University