Senior Member of Technical Staff, Office of the CTO
Transphorm
Dr. Bisi is a Senior Member of Technical Staff with Transphorm. He received a PhD degree on GaN devices from the University of Padova, Italy, in 2015, and he joined Transphorm in 2016, where he leads multiple R&D projects on advanced GaN materials and devices. Dr. Bisi has co-authored more than 50 peer-reviewed publications and has been awarded 6 utility patents. He is Vice-Chair of GaN technical committee of the IEEE IRPS conference.
S17 - High-Power GaN Devices and Applications
Monday, February 26, 2024
8:30 AM – 12:00 PM PST
IS22.6 - 15-mΩ GaN Device with 5-μs Short-Circuit Withstand Time
Thursday, February 29, 2024
10:55 AM – 11:20 AM PST