Silicon IGBTs have been pervasive in high-voltage power electronics applications for decades; as such, the packages designed for these products have become largely standardized. However, these packages were not designed with fast switching devices like silicon carbide (SiC) in mind. In this talk, the sources of parasitic inductance in power packaging will be reviewed, and the harms these can cause when paired with SiC power devices will be described. A direct comparison will be shown of a SiC MOSFET half bridge in a standard package and an advanced package, directly illustrating the importance of SiC power packaging.
