T20.6 - Gate-Source-Dependent Soft- and Hard-Switching Losses of 1200V SiC MOSFETs Utilizing Heatsinkless Calorimetric Measurements Based on Optical Sensors

Design automation is becoming increasingly prevalent in addressing the growing demands of modern power electronic applications, particularly in terms of efficiency and power density. To achieve this, accurate loss models of the power semiconductors used are essential for soft- and hard-switching applications. While the double pulse test is a well-established fast electrical characterization method for hard-switching losses, accurately determining soft-switching losses for wide bandgap semiconductors requires calorimetric measurements. Therefore an automated DPT is modularly adjusted to enable fast calorimetric measurements within the same setup. For this a new rapid calorimetric approach is realized utilizing an external glass fiber sensor which enables precise measurement during operation without electromagnetic interference, hence further increasing the precision of loss interpolation while decreasing the measurement times to less than 10 s further reducing the cooldown times utilizing a heatsinkless approach. With the modular set-up hard- and soft-switching losses in dependence of the gate-source voltage are characterized for different 1200 V Silicon Carbide devices.