Paralleling the silicon carbide (SiC) MOSFETs is necessary to increase the current rating in high-power applications. However, the unbalanced dynamic current sharing during switching transient may cause unequal power loss and thermal distribution among paralleled SiC MOSFETs which may have negative impact on operation lifetime. This paper proposes a low-cost balancing method by using differential mode choke (DMC) in the gate driving loop to address the unbalanced dynamic current caused by asymmetric layout. The mechanism of dynamic current sharing is firstly explored, then the enhancement method using DMC is proposed and analyzed. The double-pulse tests of paralleling SiC MOSFETs are performed to verify the proposed method. Based on the experimental results, the current imbalance is reduced from original 53.9 % to 10.6 % with negligible impact on gate driving speed.
