Series connection of Silicon Carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) is a viable solution to design switches for voltages that are not yet commercially available or limited for single-die devices. However, the stray inductance in the current commutation loop is larger than a single high-voltage (HV) device, due to the electrical connection of the series-connected SiC MOSFETs. Thus, instead of serializing several discrete packaged devices or internally in a half-bridge module, which introduces significant stray inductance, a power module with chip-level series-connected SiC MOSFETs is designed and tested. Two 1.2 kV SiC MOSFETs are connected in series to form a 2.4 kV switch and decoupling capacitors are integrated inside the module to decouple the stray inductance of the terminals.