Conventional packaging limits the full exploitation of the high-frequency and high-power density capabilities of SiC MOSFETs. This work reports a pressure contact packaging on SiC modules to replace weak bonding elements and to achieve double-sided cooling. Three viable module layouts for a half bridge with multiple parallel chips are proposed, focusing on maximum power density and functional performance. The parasitic inductance of the developed prototype with terminals is reduced to 4.76 nH, facilitating a high switching speed. The feasibility of the proposed packaging approach is confirmed by both simulations and experiments.
