This study proposes a silicon carbide (SiC) power module using a low-permittivity material to mitigate common-mode (CM) noise. The material replaces a part of the bottom copper layer of a direct-bonded copper (DBC) substrate, which decreases CM capacitance. The design scheme does not sacrifice thermal performance and the size of power module. The reliability against mechanical deformation is also analyzed by simulations and thermal cycling tests. The parasitic CM capacitance of the proposed module is reduced by 52.5% compared to that of the conventional module. Double pulse tests verified that the peak CM current was reduced by 52% and 43% at turn-off and at turn-on instant, respectively.
