The 10-kV SiC device imposes high insulation requirement on corresponding power stage design. As the voltage stress and clearance distance increases, the compact design of the converter will be challenging. In this paper, a compact power stage design is realized by adopting a new heatsink configuration. With the new heatsink configuration, a field shaping structure is proposed to suppress concentrated electric field close to the edges, so that the clearance between heatsinks can be reduced. Simulation and test have validated the design. The proposed design has been tested at full load.
