The digest focuses on the optimization of the switching losses using current source gate driver in constant current and gate shaping mode and its comparison with voltage source gate driver. Selection of gate profiles in current source driver based on peak performance operation point leads to higher switching losses at partial and middle loads due to change in the parameters of SiC-MOSFETs. Based on measurements with current source gate driver, an operation point based optimization is recommended to decrease the losses at all operation points.
