The precise and real-time monitoring of MOSFETs junction temperature is paramount for the efficiency, reliability, and longevity of power electronic systems. This paper introduces an innovative on-chip temperature sensor designed for real-time junction temperature sensing of MOSFETs. The presented on-chip temperature sensor represents a significant advancement in the field, aligning with contemporary industry requirements and marking a new direction in temperature sensing for power electronics. The 1.2 kV 4H-SiC BiDirectional Field Effect Transistor (BiDFET) has been developed as the first monolithic SiC-based bidirectional switch incorporating this on-chip temperature sensing capability for each of its constituent FETs. Beyond the BiDFET, the same temperature sensing solution is broadly applicable to MOSFETs, enhancing its potential impact and relevance to all power electronics converters.
