The concept and the prototype of an aging detector for SiC power MOSFET are proposed and described. It leverages the resonant peak values of gate-source voltage at different instants during the switching transients to decode the change of multiple aging indicators such as the increases of ON-state resistance and threshold voltage. Modeling-based analysis is conducted to support the idea. The detector can be fully integrated into gate drivers without any additional connection to the power stage and is functional during normal power stage operation. A prototype unit is built, and preliminary tests have been conducted to validate the idea and the practicality of the detector.
