Predicting the reliability of a power electronics system can be a complex task. Understanding the potential failure mechanisms of the major system components early in the design cycle lays the foundation for a successful design. This presentation will address the practical aspects of reliability in SiC MOSFETs and provide the attendees with an understanding of key aspects to consider and examine during design and testing. Factors including blocking voltage, gate voltage, power cycling, surge, short circuit, and avalanche will be discussed.
