A Four Quadrant Switch (FQS) provides bidirectional current carrying and bidirectional voltage blocking capability. Integrated FQS can enable significant size, complexity, and cost savings compared to traditional implementations that use multiple components resulting in limited performance and high cost. We demonstrate GaN based integrated FQS technology. The lateral GaN HEMT technology combined with a common drain configuration allows us to share the high-voltage region and results in a 40% reduction in the die size compared to two discrete GaN switches. The integrated GaN FQS is a 60mΩ switch assembled in a TO-247 package with a floating tab (Fig 1). We show excellent bidirectional current conduction and voltage blocking with symmetric current-voltage and capacitance-voltage behavior. The switching losses and figures-of-merit are significantly better than state-of-art SiC MOSFETs.