This presentation deals with the parallel connection of low-voltage GaN FET devices focusing on the transient operation during the turn-on and turn-off switching. A suitable experimental board has been developed to investigate the switching transient and the current share features for several GaN FET connected in parallel to perform a single high current switch. Every electronic device can be driven independently, and a source shunt per each GaN FET monitors every transistor current. The experimental tests show the switching mechanism and the main technology parameters involved in the transients’ current share. The presentation contributes to developing reliable power modules made of several GaN FETs that operate in parallel.
