GaN HEMT, with its superior figure of merit, is promising to enable efficient and compact converter design. Lateral GaN structure is naturally ideal for package integration. This talk will provide an overview on how we can benefit from integrated GaN technology. The goal is to help designers to understand why GaN HEMT is different from Si power devices in application and circuit design, what integrated GaN features can be beneficial in various specific applications and how to choose the proper GaN device from discreet to different level of integrated GaN device in your design.
