Until now, the availability of high-power Silicon Carbide (SiC) MOSFET modules in industry-standard packaging has been limited. This presentation introduces a novel SiC power module, utilizing the industry-standard package depicted in Figure 1, which has been optimized to minimize internal inductance. This optimized SiC packaging is subjected to a performance evaluation, comparing it against a traditional package containing Silicon (Si) IGBTs. Additionally, the optimized SiC package's performance is assessed and compared using both a conventional DC bus and traditional current measurement techniques and test results using an optimized low inductance DC link and low insertion inductance current viewing resistor (CVR). The results of the Double Pulse Test (DPT) herein show that the combination of the optimized industry-standard package, the low inductance DC link, and the CVR enables faster switching while mitigating surge voltage. This ultimately leads to decreased switching losses in the final application.
