T21 - Gate Drive Circuits

Technical Lecture Session Chair(s)

• KW

  Kang Wei

  Texas Instruments
• 

  Seungdeog Choi

  Associate Professor
  Mississippi State University

Presentations:

• 1:30 PM – 1:50 PM PST

  Variable Gate Current Range Digital Gate Driver IC Always Providing 6-Bit Controllability in Various IGBTs
  

  Technical Lecture Presenter: Haoxi Zhou, Master (he/him/his) – The University of Tokyo
• 1:50 PM – 2:10 PM PST

  A Digital Gate Driver IC with a Digitally Adjustable DESAT and Parameter Adjustment Method for False Detection Prevention and Short-Circuit Protection of 1200V 180A SiC Module
  

  Technical Lecture Presenter: Koutaro Miyazaki, PhD – Toshiba Research & Development Center
• 2:10 PM – 2:30 PM PST

  Closed Loop Digital Design of Active Gate Driver Based Power Converter
  

  Technical Lecture Presenter: Manish Kumar, PhD (he/him/his) – Cardiff University and Toshiba Europe Ltd
• 2:30 PM – 2:50 PM PST

  A Quad-Slope 70V GaN Gate Driver with Integrated Three-Mode Level Shifter for Enhanced Negative Voltage Tolerance, dV/dt Detection and Double-Edge Self-Triggered Delay Compensation
  

  Technical Lecture Presenter: Tianqi Liu, PhD (he/him/his) – University of Macau
• 2:50 PM – 3:10 PM PST

  5-MHz Operation of a DC 565-V SiC-MOSFET Half-Bridge Inverter by Reducing Thermal Resistance of General-Purpose Gate Drivers
  

  Technical Lecture Presenter: Koji Orikawa, PhD – Hokkaido University
• 3:40 PM – 4:00 PM PST

  Application of a Short-Circuit Protection by Using Gate Charge Characteristic to Three Parallel Connected IGBT Modules
  

  Technical Lecture Presenter: Takeshi Horiguchi, PhD – Mitsubishi Electric Corporation
• 4:00 PM – 4:20 PM PST

  Impact of Operational Parameters on dVDS/dt of SiC MOSFET and a Scheme for Gate Driver Resistance Selection to Limit dVDS/dt
  

  Technical Lecture Presenter: Aditya Aman, Doctoral Student (he/him/his) – IIT Bombay